CEP51A3 Datasheet. Specs and Replacement
Type Designator: CEP51A3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 232 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: TO220
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CEP51A3 datasheet
cep51a3 ceb51a3.pdf
CEP51A3/CEB51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 48A, RDS(ON) =16.5m @VGS = 10V. RDS(ON) =28m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒
Detailed specifications: MMIS60R580P, 2SK3435, 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3, IRFB3607, CS4145, FDD6035AL, FHP740, FTP08N06A, GPT13N50, GPT13N50D, JCS4N65C, JCS4N65F
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