LSK389 Specs and Replacement
Type Designator: LSK389
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 135 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: TO71
LSK389 substitution
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LSK389 datasheet
lsk389.pdf
LSK389 ULTRA LOW NOISE MONOLITHIC DUAL Linear Integrated Systems N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/ Hz (typ) TIGHT MATCHING VGS1-2 = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 20mS (typ) TO-71 BOTTOM VIEW LOW CAPACITANCE 25pF typ SOIC-A IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389 1 8 S1 G2 ABSOLUTE MAXIMUM RATINGS1 3 5 G1 S... See More ⇒
Detailed specifications: FHP740 , FTP08N06A , GPT13N50 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , BS170 , MDV1528 , ME60N03 , ME60N03A , NE5520279A , NTE458 , PHB55N03LTA , PHD55N03LTA , PHP55N03LTA .
History: IXFK90N20Q | IPW60R230P6 | MMF60R190PTH | IPB60R180P7 | IPZ65R045C7
Keywords - LSK389 MOSFET specs
LSK389 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IXFK90N20Q | IPW60R230P6 | MMF60R190PTH | IPB60R180P7 | IPZ65R045C7
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