All MOSFET. LSK389 Datasheet

 

LSK389 Datasheet and Replacement


   Type Designator: LSK389
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.02 A
   Tj ⓘ - Maximum Junction Temperature: 135 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: TO71
 

 LSK389 substitution

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LSK389 Datasheet (PDF)

 ..1. Size:114K  linear-systems
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LSK389

LSK389 ULTRA LOW NOISE MONOLITHIC DUAL Linear Integrated Systems N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/Hz (typ)TIGHT MATCHING |VGS1-2| = 20mV maxHIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 20mS (typ) TO-71BOTTOM VIEWLOW CAPACITANCE 25pF typ SOIC-AIMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389 1 8S1 G2ABSOLUTE MAXIMUM RATINGS1 3 5G1 S

Datasheet: FHP740 , FTP08N06A , GPT13N50 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , CS150N03A8 , MDV1528 , ME60N03 , ME60N03A , NE5520279A , NTE458 , PHB55N03LTA , PHD55N03LTA , PHP55N03LTA .

Keywords - LSK389 MOSFET datasheet

 LSK389 cross reference
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