All MOSFET. NE5520279A Datasheet

 

NE5520279A Datasheet and Replacement


   Type Designator: NE5520279A
   Marking Code: A2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: 79A
 

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NE5520279A Datasheet (PDF)

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NE5520279A

NEC'S 3.2 V, 2 W, L&S BAND NE5520279AMEDIUM POWER SILICON LD-MOSFETFEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE: PACKAGE OUTLINE 79A 5.7x5.7x1.1 mm MAX(Bottom View)4.2 MAX. 1.50.2 HIGH OUTPUT POWER: Source Source +32 dBm TYP HIGH LINEAR GAIN: Gate Drain Gate Drain 10 dB TYP @ 1.8 GHz HIGH POWER ADDED EFFICIENCY:

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NE5520279A

SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and h

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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