All MOSFET. NE5520279A Datasheet

 

NE5520279A Datasheet and Replacement


   Type Designator: NE5520279A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: 79A
 

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NE5520279A Datasheet (PDF)

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NE5520279A

NEC'S 3.2 V, 2 W, L&S BAND NE5520279AMEDIUM POWER SILICON LD-MOSFETFEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE: PACKAGE OUTLINE 79A 5.7x5.7x1.1 mm MAX(Bottom View)4.2 MAX. 1.50.2 HIGH OUTPUT POWER: Source Source +32 dBm TYP HIGH LINEAR GAIN: Gate Drain Gate Drain 10 dB TYP @ 1.8 GHz HIGH POWER ADDED EFFICIENCY:

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NE5520279A

SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and h

Datasheet: JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , LSK389 , MDV1528 , ME60N03 , ME60N03A , AO3401 , NTE458 , PHB55N03LTA , PHD55N03LTA , PHP55N03LTA , QM3006D , SI4340DY , SPB80N08S2L , SPP80N08S2L .

History: BLF6G22L-40BN | APTC60AM24SCTG | 2SK3210

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