NE5520279A Datasheet. Specs and Replacement

Type Designator: NE5520279A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: 79A

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NE5520279A datasheet

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NE5520279A

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A 5.7x5.7x1.1 mm MAX (Bottom View) 4.2 MAX. 1.5 0.2 HIGH OUTPUT POWER Source Source +32 dBm TYP HIGH LINEAR GAIN Gate Drain Gate Drain 10 dB TYP @ 1.8 GHz HIGH POWER ADDED EFFICIENCY ... See More ⇒

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NE5520279A

SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and h... See More ⇒

Detailed specifications: JCS4N65C, JCS4N65F, JCS4N65R, JCS4N65V, LSK389, MDV1528, ME60N03, ME60N03A, IRF1407, NTE458, PHB55N03LTA, PHD55N03LTA, PHP55N03LTA, QM3006D, SI4340DY, SPB80N08S2L, SPP80N08S2L

Keywords - NE5520279A MOSFET specs

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