NE5520279A PDF Specs and Replacement
Type Designator: NE5520279A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: 79A
NE5520279A substitution
NE5520279A PDF Specs
ne5520279a.pdf
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A 5.7x5.7x1.1 mm MAX (Bottom View) 4.2 MAX. 1.5 0.2 HIGH OUTPUT POWER Source Source +32 dBm TYP HIGH LINEAR GAIN Gate Drain Gate Drain 10 dB TYP @ 1.8 GHz HIGH POWER ADDED EFFICIENCY ... See More ⇒
ne5520279a.pdf
SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and h... See More ⇒
Detailed specifications: JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , LSK389 , MDV1528 , ME60N03 , ME60N03A , 2SK3568 , NTE458 , PHB55N03LTA , PHD55N03LTA , PHP55N03LTA , QM3006D , SI4340DY , SPB80N08S2L , SPP80N08S2L .
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