NEC'S 3.2 V, 2 W, L&S BAND NE5520279AMEDIUM POWER SILICON LD-MOSFETFEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE: PACKAGE OUTLINE 79A 5.7x5.7x1.1 mm MAX(Bottom View)4.2 MAX. 1.50.2 HIGH OUTPUT POWER: Source Source +32 dBm TYP HIGH LINEAR GAIN: Gate Drain Gate Drain 10 dB TYP @ 1.8 GHz HIGH POWER ADDED EFFICIENCY:

SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and h