All MOSFET. STK630F Datasheet

 

STK630F Datasheet and Replacement


   Type Designator: STK630F
   Marking Code: STK630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220F
 

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STK630F Datasheet (PDF)

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STK630F

STK630FSemiconductor Semiconductor Power MOSFETFeatures Avalanche rugged technology. Low input capacitance. Low leakage current : 10 (Max.) @ VDS=200V. Low RDS(on) : 0.30(Typ.) Ordering Information Type NO. Marking Package Code STK630F STK630 TO-220F-3LOutline Dimensions unit : mm 3.05~3.35 9.80~10.20 2.60~3.00 1.07 Min. 0.90 Max.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDMS7600AS | FDS6690AS

Keywords - STK630F MOSFET datasheet

 STK630F cross reference
 STK630F equivalent finder
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