All MOSFET. STK630F Datasheet

 

STK630F Datasheet and Replacement


   Type Designator: STK630F
   Marking Code: STK630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220F
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STK630F Datasheet (PDF)

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STK630F

STK630FSemiconductor Semiconductor Power MOSFETFeatures Avalanche rugged technology. Low input capacitance. Low leakage current : 10 (Max.) @ VDS=200V. Low RDS(on) : 0.30(Typ.) Ordering Information Type NO. Marking Package Code STK630F STK630 TO-220F-3LOutline Dimensions unit : mm 3.05~3.35 9.80~10.20 2.60~3.00 1.07 Min. 0.90 Max.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HM6N70F | SVS70R420FE3 | BS170F

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