TSP8N60M MOSFET Datasheet: N-Ch, 600V, 7.5A. Full specification with pinout and replacement list

TSP8N60M Specs and Replacement

Type Designator: TSP8N60M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

TSP8N60M substitution

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TSP8N60M datasheet

..1. Size:1268K truesemi
tsp8n60m tsf8n60m.pdf pdf_icon

TSP8N60M/TSF8N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.5A,600V,Max.RDS(on)=1.20 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒

8.1. Size:1169K truesemi
tsp8n65m tsf8n65m.pdf pdf_icon

TSP8N65M/TSF8N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.5A,650V,Max.RDS(on)=1.50 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒

Detailed specifications: PHD55N03LTA, PHP55N03LTA, QM3006D, SI4340DY, SPB80N08S2L, SPP80N08S2L, STK630F, TSF8N60M, IRFZ24N, UTC50N06L, STK0460F, FMH23N50E, FMV23N50E, FMR23N50E, FQP630, SVF2N60M, SVF2N60F