All MOSFET. TSP8N60M Datasheet

 

TSP8N60M Datasheet and Replacement


   Type Designator: TSP8N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

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TSP8N60M Datasheet (PDF)

 ..1. Size:1268K  truesemi
 tsp8n60m tsf8n60m.pdf pdf_icon

TSP8N60M

TSP8N60M/TSF8N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.5A,600V,Max.RDS(on)=1.20 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

 8.1. Size:1169K  truesemi
 tsp8n65m tsf8n65m.pdf pdf_icon

TSP8N60M

TSP8N65M/TSF8N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.5A,650V,Max.RDS(on)=1.50 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

Datasheet: PHD55N03LTA , PHP55N03LTA , QM3006D , SI4340DY , SPB80N08S2L , SPP80N08S2L , STK630F , TSF8N60M , IRFZ24N , UTC50N06L , STK0460F , FMH23N50E , FMV23N50E , FMR23N50E , FQP630 , SVF2N60M , SVF2N60F .

History: UTC50N06L | DH100P30D | DH100P30E | 2N6796U | IRF8707 | STK630F | IRFB16N60LPBF

Keywords - TSP8N60M MOSFET datasheet

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