All MOSFET. FMV23N50E Datasheet

 

FMV23N50E Datasheet and Replacement


   Type Designator: FMV23N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.245 Ohm
   Package: TO220F
 
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FMV23N50E Datasheet (PDF)

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FMV23N50E

FMV23N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

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FMV23N50E

FMV23N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

Datasheet: SPB80N08S2L , SPP80N08S2L , STK630F , TSF8N60M , TSP8N60M , UTC50N06L , STK0460F , FMH23N50E , IRF520 , FMR23N50E , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 .

History: IRLZ14A

Keywords - FMV23N50E MOSFET datasheet

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