All MOSFET. HBS170 Datasheet

 

HBS170 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HBS170
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO92

 HBS170 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HBS170 Datasheet (PDF)

 ..1. Size:403K  shantou-huashan
 hbs170.pdf

HBS170 HBS170

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF9642

 

 
Back to Top