HBS170 Specs and Replacement
Type Designator: HBS170
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 17 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO92
HBS170 substitution
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HBS170 datasheet
hbs170.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, ... See More ⇒
Detailed specifications: FMR23N50E , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , IRLB3034 , HFF11N60S , HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 .
History: AP110N04D
Keywords - HBS170 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP110N04D
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