All MOSFET. HBS170 Datasheet

 

HBS170 Datasheet and Replacement


   Type Designator: HBS170
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO92
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HBS170 Datasheet (PDF)

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HBS170

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,

Datasheet: FMR23N50E , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , IRF520 , HFF11N60S , HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 .

History: STF15N95K5 | CEB75N06 | SSM9971GJ | NTP30N06 | IRFB52N15D | ZXM66P02N8TC | UK3018

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