All MOSFET. HFF11N60S Datasheet

 

HFF11N60S Datasheet and Replacement


   Type Designator: HFF11N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.1 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

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HFF11N60S Datasheet (PDF)

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HFF11N60S

HFF11N60S Shantou Huashan Electronic Devices Co., Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220FThey are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performa

Datasheet: FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , HBS170 , IRF9640 , HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 .

History: FDMS86500L | ELM32416LA | FQB34N20 | IRF7702PBF | UPA1728 | 2SK641 | BUZ94

Keywords - HFF11N60S MOSFET datasheet

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