HFF11N60S PDF and Equivalents Search

 

HFF11N60S Specs and Replacement

Type Designator: HFF11N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.1 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220F

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HFF11N60S datasheet

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HFF11N60S

HFF11N60S Shantou Huashan Electronic Devices Co., Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performa... See More ⇒

Detailed specifications: FQP630, SVF2N60M, SVF2N60F, SVF2N60T, SVF2N60D, 2SK641, 2SK642, HBS170, IRF9640, HFF2N60, HFF5N60, HFF630, HFF640, HFF7N60, HFH12N60, HFH20N50, HFH7N60

Keywords - HFF11N60S MOSFET specs

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