HFF2N60 Datasheet and Replacement
Type Designator: HFF2N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220F
HFF2N60 substitution
HFF2N60 Datasheet (PDF)
hff2n60.pdf
N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF2N60 APPLICATIONSL TO-220F High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25
Datasheet: SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , HBS170 , HFF11N60S , IRF520 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 , HFH9N90 .
History: BUK624R5-30C | SVSP60R090FJDHD4 | UTT30P06L-TQ2-T | SUP85N10-10P | AOWF9N70 | BUK138-50DL | TK10A60W
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History: BUK624R5-30C | SVSP60R090FJDHD4 | UTT30P06L-TQ2-T | SUP85N10-10P | AOWF9N70 | BUK138-50DL | TK10A60W
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