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HFF630 Specs and Replacement

Type Designator: HFF630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220F

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HFF630 datasheet

 ..1. Size:229K  shantou-huashan
 hff630.pdf pdf_icon

HFF630

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF630 APPLICATIONSL TO-220F High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 1 Tstg Storage Temperature -55 150 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipatio... See More ⇒

Detailed specifications: SVF2N60T, SVF2N60D, 2SK641, 2SK642, HBS170, HFF11N60S, HFF2N60, HFF5N60, K2611, HFF640, HFF7N60, HFH12N60, HFH20N50, HFH7N60, HFH9N90, HFP13N10, HFP13N50

Keywords - HFF630 MOSFET specs

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