All MOSFET. HFF630 Datasheet

 

HFF630 Datasheet and Replacement


   Type Designator: HFF630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220F
 

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HFF630 Datasheet (PDF)

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HFF630

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF630 APPLICATIONSL TO-220F High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 1TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power Dissipatio

Datasheet: SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , HBS170 , HFF11N60S , HFF2N60 , HFF5N60 , IRF9640 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 , HFH9N90 , HFP13N10 , HFP13N50 .

History: HFF5N60

Keywords - HFF630 MOSFET datasheet

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