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HFF7N60 Specs and Replacement

Type Designator: HFF7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

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HFF7N60 datasheet

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HFF7N60

Shantou Huashan Electronic Devices Co., Ltd. HFF7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan... See More ⇒

Detailed specifications: 2SK641, 2SK642, HBS170, HFF11N60S, HFF2N60, HFF5N60, HFF630, HFF640, RU7088R, HFH12N60, HFH20N50, HFH7N60, HFH9N90, HFP13N10, HFP13N50, HFP15N06, HFP17N10

Keywords - HFF7N60 MOSFET specs

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