All MOSFET. HFH12N60 Datasheet

 

HFH12N60 Datasheet and Replacement


   Type Designator: HFH12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO3P
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HFH12N60 Datasheet (PDF)

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HFH12N60

Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

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History: NVD5862N | IXTT26N50P | BL2N50-P | IRF740APBF | SSF3092G1 | HAT2103R | AON6938

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