All MOSFET. HFH12N60 Datasheet

 

HFH12N60 Datasheet and Replacement


   Type Designator: HFH12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO3P
 

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HFH12N60 Datasheet (PDF)

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HFH12N60

Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

Datasheet: 2SK642 , HBS170 , HFF11N60S , HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , STP65NF06 , HFH20N50 , HFH7N60 , HFH9N90 , HFP13N10 , HFP13N50 , HFP15N06 , HFP17N10 , HFP2N60 .

History: AOT25S65L | ELM34406AA-N | AOTL66810Q | OSG60R380AF | OSG60R320FT3ZF | OSG60R1K8AF | OSG60R360FSF

Keywords - HFH12N60 MOSFET datasheet

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