All MOSFET. HFH20N50 Datasheet

 

HFH20N50 Datasheet and Replacement


   Type Designator: HFH20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO3P
      - MOSFET Cross-Reference Search

 

HFH20N50 Datasheet (PDF)

 ..1. Size:630K  shantou-huashan
 hfh20n50.pdf pdf_icon

HFH20N50

Shantou Huashan Electronic Devices Co.,Ltd. HFH20N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SPU07N60C3 | SSW60R190S2 | IXTP96P085T | ZXMP3A16N8TA | OSG65R130HT3ZF | NTMS4920N | IRL3705ZLPBF

Keywords - HFH20N50 MOSFET datasheet

 HFH20N50 cross reference
 HFH20N50 equivalent finder
 HFH20N50 lookup
 HFH20N50 substitution
 HFH20N50 replacement

 

 
Back to Top

 


 
.