All MOSFET. HFH20N50 Datasheet

 

HFH20N50 Datasheet and Replacement


   Type Designator: HFH20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO3P
 

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HFH20N50 Datasheet (PDF)

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HFH20N50

Shantou Huashan Electronic Devices Co.,Ltd. HFH20N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

Datasheet: HBS170 , HFF11N60S , HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HY1906P , HFH7N60 , HFH9N90 , HFP13N10 , HFP13N50 , HFP15N06 , HFP17N10 , HFP2N60 , HFP30N06 .

History: IPD60R380P6 | 2SK1916-01R

Keywords - HFH20N50 MOSFET datasheet

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