HFH20N50 PDF and Equivalents Search

 

HFH20N50 Specs and Replacement

Type Designator: HFH20N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO3P

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HFH20N50 datasheet

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HFH20N50

Shantou Huashan Electronic Devices Co.,Ltd. HFH20N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc... See More ⇒

Detailed specifications: HBS170, HFF11N60S, HFF2N60, HFF5N60, HFF630, HFF640, HFF7N60, HFH12N60, AOD4184A, HFH7N60, HFH9N90, HFP13N10, HFP13N50, HFP15N06, HFP17N10, HFP2N60, HFP30N06

Keywords - HFH20N50 MOSFET specs

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