HFH7N60 PDF and Equivalents Search

 

HFH7N60 Specs and Replacement

Type Designator: HFH7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO3P

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HFH7N60 datasheet

 ..1. Size:616K  shantou-huashan
 hfh7n60.pdf pdf_icon

HFH7N60

Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance... See More ⇒

 9.1. Size:253K  semihow
 hfh7n80.pdf pdf_icon

HFH7N60

Mar 2010 BVDSS = 800 V RDS(on) typ = 1.55 HFH7N80 ID = 7.0 A 800V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Unrivalled Gate Charge 35 nC (Typ ) Exte... See More ⇒

Detailed specifications: HFF11N60S, HFF2N60, HFF5N60, HFF630, HFF640, HFF7N60, HFH12N60, HFH20N50, AO4407A, HFH9N90, HFP13N10, HFP13N50, HFP15N06, HFP17N10, HFP2N60, HFP30N06, HFP45N06

Keywords - HFH7N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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