HFP30N06 Datasheet. Specs and Replacement
Type Designator: HFP30N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220
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HFP30N06 substitution
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HFP30N06 datasheet
hfp30n06.pdf
HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche ch... See More ⇒
Detailed specifications: HFH20N50, HFH7N60, HFH9N90, HFP13N10, HFP13N50, HFP15N06, HFP17N10, HFP2N60, IRF740, HFP45N06, HFP4N60, HFP4N65, HFP50N06, HFP50N06V, HFP5N80, HFP60N06, HFP630
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