All MOSFET. HFP50N06 Datasheet

 

HFP50N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: HFP50N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 185 nS

Drain-Source Capacitance (Cd): 430 pF

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO220

HFP50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFP50N06 Datasheet (PDF)

1.1. hfp50n06.pdf Size:292K _shantou-huashan

HFP50N06
HFP50N06

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06 █ APPLICATIONSL TO-220 Low Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~175℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation ⋯

1.2. hfp50n06v.pdf Size:617K _shantou-huashan

HFP50N06
HFP50N06

 Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06V N-Channel Enhancement Mode Field Effect Transistor █ Applications TO-220 • Servo motor control. • DC/DC converters • Low Power Switching mode power appliances. • Other switching applications. 1- G 2-D 3-S █ Features • 50A, 60V(See Note), RDS(on) <28mVΩ@VGS = 10 V • Fast switching • 100% avalanche

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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