HFP50N06 Spec and Replacement
Type Designator: HFP50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 185 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
HFP50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFP50N06 Specs
hfp50n06.pdf
N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 175 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation ... See More ⇒
hfp50n06v.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06V N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. DC/DC converters Low Power Switching mode power appliances. Other switching applications. 1- G 2-D 3-S Features 50A, 60V(See Note), RDS(on) ... See More ⇒
hfp50n06a hfs50n06a.pdf
Oct 2016 HFP50N06A / HFS50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFP50N06A HFS50N06A Symbol TO-220 TO-220F S S... See More ⇒
Detailed specifications: HFP13N50 , HFP15N06 , HFP17N10 , HFP2N60 , HFP30N06 , HFP45N06 , HFP4N60 , HFP4N65 , IRF540 , HFP50N06V , HFP5N80 , HFP60N06 , HFP630 , HFP640 , HFP70N03V , HFP70N06 , HFP730 .
History: HM7N60 | HM80N03A | HFP4N90 | MTM13227 | 3205PL | RJK0304DPB | TMD18N20Z
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