All MOSFET. HFP60N06 Datasheet

 

HFP60N06 Datasheet and Replacement


   Type Designator: HFP60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO220
 

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HFP60N06 Datasheet (PDF)

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HFP60N06

Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 60A, 60V(See Note), RDS(on)

Datasheet: HFP2N60 , HFP30N06 , HFP45N06 , HFP4N60 , HFP4N65 , HFP50N06 , HFP50N06V , HFP5N80 , IRF640 , HFP630 , HFP640 , HFP70N03V , HFP70N06 , HFP730 , HFP740 , HFP75N08 , HFP75N80C .

History: AO7800 | AON6504 | HCCZ120R080H1 | SSG4470STM | HCD65R2K2 | SSM3J02F | SIR406DP

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