HFP60N06 PDF and Equivalents Search

 

HFP60N06 Specs and Replacement

Type Designator: HFP60N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 237 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO220

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HFP60N06 datasheet

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HFP60N06

Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 60A, 60V(See Note), RDS(on) ... See More ⇒

Detailed specifications: HFP2N60, HFP30N06, HFP45N06, HFP4N60, HFP4N65, HFP50N06, HFP50N06V, HFP5N80, IRFZ44, HFP630, HFP640, HFP70N03V, HFP70N06, HFP730, HFP740, HFP75N08, HFP75N80C

Keywords - HFP60N06 MOSFET specs

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