HFP70N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: HFP70N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO220
HFP70N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFP70N06 Datasheet (PDF)
hfp70n06.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFP70N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 70A, 60V(See Note), RDS(on)
hfp70n03v.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFP70N03VN-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N4222A | RF1S530SM | SIF5N65F
History: 2N4222A | RF1S530SM | SIF5N65F
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