HFP70N06 PDF and Equivalents Search

 

HFP70N06 Specs and Replacement

Type Designator: HFP70N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO220

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HFP70N06 datasheet

 ..1. Size:849K  shantou-huashan
 hfp70n06.pdf pdf_icon

HFP70N06

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 70A, 60V(See Note), RDS(on) ... See More ⇒

 7.1. Size:692K  shantou-huashan
 hfp70n03v.pdf pdf_icon

HFP70N06

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N03V N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on) ... See More ⇒

Detailed specifications: HFP4N65, HFP50N06, HFP50N06V, HFP5N80, HFP60N06, HFP630, HFP640, HFP70N03V, IRFB4110, HFP730, HFP740, HFP75N08, HFP75N80C, HFP7N60, HFP7N80, HFP80N75, HFP830

Keywords - HFP70N06 MOSFET specs

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