All MOSFET. HFP740 Datasheet

 

HFP740 Datasheet and Replacement


   Type Designator: HFP740
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220
 

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HFP740 Datasheet (PDF)

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HFP740

Shantou Huashan Electronic Devices Co.,Ltd. HFP740 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited f

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HFP740

Sep 2011BVDSS = 400 VRDS(on) typ HFP740ID = 10.5 A400V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lowe

Datasheet: HFP50N06V , HFP5N80 , HFP60N06 , HFP630 , HFP640 , HFP70N03V , HFP70N06 , HFP730 , 10N60 , HFP75N08 , HFP75N80C , HFP7N60 , HFP7N80 , HFP80N75 , HFP830 , HFP840 , HFR1N60 .

History: IPI100N08N3G

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