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HFP75N08 Specs and Replacement


   Type Designator: HFP75N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 173 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 225 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
 

 HFP75N08 substitution

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HFP75N08 Specs

 ..1. Size:270K  shantou-huashan
 hfp75n08.pdf pdf_icon

HFP75N08

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 175 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation ... See More ⇒

 8.1. Size:1339K  shantou-huashan
 hfp75n80c.pdf pdf_icon

HFP75N08

Shantou Huashan Electronic Devices Co.,Ltd. HFP75N80C N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 75A, 80V(See Note), RDS(on) ... See More ⇒

Detailed specifications: HFP5N80 , HFP60N06 , HFP630 , HFP640 , HFP70N03V , HFP70N06 , HFP730 , HFP740 , AO3400 , HFP75N80C , HFP7N60 , HFP7N80 , HFP80N75 , HFP830 , HFP840 , HFR1N60 , HFU1N60 .

History: MMBFU310L

Keywords - HFP75N08 MOSFET specs

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