HFP75N08 Datasheet. Specs and Replacement

Type Designator: HFP75N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 173 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 225 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO220

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HFP75N08 datasheet

 ..1. Size:270K  shantou-huashan
 hfp75n08.pdf pdf_icon

HFP75N08

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 175 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation ... See More ⇒

 8.1. Size:1339K  shantou-huashan
 hfp75n80c.pdf pdf_icon

HFP75N08

Shantou Huashan Electronic Devices Co.,Ltd. HFP75N80C N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 75A, 80V(See Note), RDS(on) ... See More ⇒

Detailed specifications: HFP5N80, HFP60N06, HFP630, HFP640, HFP70N03V, HFP70N06, HFP730, HFP740, AO3400, HFP75N80C, HFP7N60, HFP7N80, HFP80N75, HFP830, HFP840, HFR1N60, HFU1N60

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