All MOSFET. HFP7N80 Datasheet

 

HFP7N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: HFP7N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO220

HFP7N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFP7N80 Datasheet (PDF)

1.1. hfp7n80.pdf Size:514K _shantou-huashan

HFP7N80
HFP7N80

 Shantou Huashan Electronic Devices Co., Ltd. HFP7N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

5.1. hfp7n60.pdf Size:652K _shantou-huashan

HFP7N80
HFP7N80

 Shantou Huashan Electronic Devices Co., Ltd. HFP7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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