HFP7N80 Datasheet. Specs and Replacement
Type Designator: HFP7N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220
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HFP7N80 datasheet
hfp7n80.pdf
Shantou Huashan Electronic Devices Co., Ltd. HFP7N80 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan... See More ⇒
hfp7n60.pdf
Shantou Huashan Electronic Devices Co., Ltd. HFP7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan... See More ⇒
Detailed specifications: HFP640, HFP70N03V, HFP70N06, HFP730, HFP740, HFP75N08, HFP75N80C, HFP7N60, 10N60, HFP80N75, HFP830, HFP840, HFR1N60, HFU1N60, HFU2N60, HFU70N03V, 2SJ655
Keywords - HFP7N80 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
