All MOSFET. HFP840 Datasheet

 

HFP840 Datasheet and Replacement


   Type Designator: HFP840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220
 

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HFP840 Datasheet (PDF)

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HFP840

Shantou Huashan Electronic Devices Co.,Ltd. HFP840 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom, Industrial and Consumer Environment 1- G 2-D

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HFP840

Sep 2011BVDSS = 500 VRDS(on) typ HFP840ID = 9.0 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lower

Datasheet: HFP730 , HFP740 , HFP75N08 , HFP75N80C , HFP7N60 , HFP7N80 , HFP80N75 , HFP830 , IRF9540 , HFR1N60 , HFU1N60 , HFU2N60 , HFU70N03V , 2SJ655 , 2SK2056 , 2SK2617ALS , 2SK3607-01MR .

History: SP8M3-TB | SSG4463P

Keywords - HFP840 MOSFET datasheet

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