HFP840 MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

HFP840 Specs and Replacement

Type Designator: HFP840

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

HFP840 substitution

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HFP840 datasheet

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Shantou Huashan Electronic Devices Co.,Ltd. HFP840 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom, Industrial and Consumer Environment 1- G 2-D ... See More ⇒

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Sep 2011 BVDSS = 500 V RDS(on) typ HFP840 ID = 9.0 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 25 nC (Typ.) Extended Safe Operating Area Lower ... See More ⇒

Detailed specifications: HFP730, HFP740, HFP75N08, HFP75N80C, HFP7N60, HFP7N80, HFP80N75, HFP830, 2N7000, HFR1N60, HFU1N60, HFU2N60, HFU70N03V, 2SJ655, 2SK2056, 2SK2617ALS, 2SK3607-01MR