HFR1N60 PDF and Equivalents Search

 

HFR1N60 Specs and Replacement

Type Designator: HFR1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm

Package: TO92

HFR1N60 substitution

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HFR1N60 datasheet

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HFR1N60

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 0.1. Size:244K  vishay
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

HFR1N60

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing... See More ⇒

 0.2. Size:269K  vishay
irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

HFR1N60

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing... See More ⇒

Detailed specifications: HFP740, HFP75N08, HFP75N80C, HFP7N60, HFP7N80, HFP80N75, HFP830, HFP840, P55NF06, HFU1N60, HFU2N60, HFU70N03V, 2SJ655, 2SK2056, 2SK2617ALS, 2SK3607-01MR, AO4472

Keywords - HFR1N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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