HFR1N60 Datasheet and Replacement
Type Designator: HFR1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 19 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
Package: TO92
- MOSFET Cross-Reference Search
HFR1N60 Datasheet (PDF)
hfr1n60.pdf

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFR1N60 APPLICATIONSL TO-92 high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 Tj Operating Junction Temperature 150 1G 2D PD Allowable Power DissipationTc=25
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfu1n60a sihfr1n60a sihfu1n60a.pdf

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTHD3102C | CHM62A2PAGP | SM6027NSKP | TPM2077 | IXTP110N055P | HUF76139P3 | IXFK26N60Q
Keywords - HFR1N60 MOSFET datasheet
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History: NTHD3102C | CHM62A2PAGP | SM6027NSKP | TPM2077 | IXTP110N055P | HUF76139P3 | IXFK26N60Q



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