HFU70N03V Datasheet and Replacement
Type Designator: HFU70N03V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: TO251
HFU70N03V substitution
HFU70N03V Datasheet (PDF)
hfu70n03v.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFU70N03VN-Channel Enhancement Mode Field Effect Transistor Applications TO-251 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)
Datasheet: HFP7N60 , HFP7N80 , HFP80N75 , HFP830 , HFP840 , HFR1N60 , HFU1N60 , HFU2N60 , AON7408 , 2SJ655 , 2SK2056 , 2SK2617ALS , 2SK3607-01MR , AO4472 , AON6324 , SD2932 , STK1820F .
History: WMM08N65EM | SSQ6N60 | WMB014N06HG4 | IRFHS9301 | GSM4403 | ST12N10D | KNF4540A
Keywords - HFU70N03V MOSFET datasheet
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History: WMM08N65EM | SSQ6N60 | WMB014N06HG4 | IRFHS9301 | GSM4403 | ST12N10D | KNF4540A
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