HFU70N03V PDF and Equivalents Search

 

HFU70N03V Specs and Replacement

Type Designator: HFU70N03V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: TO251

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HFU70N03V datasheet

 ..1. Size:691K  shantou-huashan
 hfu70n03v.pdf pdf_icon

HFU70N03V

Shantou Huashan Electronic Devices Co.,Ltd. HFU70N03V N-Channel Enhancement Mode Field Effect Transistor Applications TO-251 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on) ... See More ⇒

Detailed specifications: HFP7N60, HFP7N80, HFP80N75, HFP830, HFP840, HFR1N60, HFU1N60, HFU2N60, IRFP250N, 2SJ655, 2SK2056, 2SK2617ALS, 2SK3607-01MR, AO4472, AON6324, SD2932, STK1820F

Keywords - HFU70N03V MOSFET specs

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