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AO3701 Specs and Replacement

Type Designator: AO3701

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT23-5

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AO3701 datasheet

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AO3701

AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = -20V The AO3701 uses advanced trench technology to provide ID = -3A (VGS = -10V) excellent R DS(ON) and low gate charge. A Schottky diode is RDS(ON) ... See More ⇒

Detailed specifications: STK1820F, STP55NE06, STP55NE06FP, SUD50N024-06P, SVF7N65T, SVF7N65F, AO3405, AO3407G, K4145, AO4420A, AO4433, AO4456, AO4458, AO4474, AO4607, AO4614, AO4617

Keywords - AO3701 MOSFET specs

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