All MOSFET. AO3701 Datasheet

 

AO3701 Datasheet and Replacement


   Type Designator: AO3701
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT23-5
 

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AO3701 Datasheet (PDF)

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AO3701

AO3701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesVDS (V) = -20VThe AO3701 uses advanced trench technology to provide ID = -3A (VGS = -10V)excellent R DS(ON) and low gate charge. A Schottky diode is RDS(ON)

Datasheet: STK1820F , STP55NE06 , STP55NE06FP , SUD50N024-06P , SVF7N65T , SVF7N65F , AO3405 , AO3407G , IRFB3607 , AO4420A , AO4433 , AO4456 , AO4458 , AO4474 , AO4607 , AO4614 , AO4617 .

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