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AO8842 Specs and Replacement

Type Designator: AO8842

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 186 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: TSSOP8

AO8842 substitution

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AO8842 datasheet

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AO8842

AO8842 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8842 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7 A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) ... See More ⇒

Detailed specifications: AO4916, AO4916L, AO4926, AO4928, AO6806, AO8803, AO8806, AO8816, 5N60, AOD400, AOD402, AOD404, AOD406, AOD408, AOD410, AOB10N60L, AOB11S60L

Keywords - AO8842 MOSFET specs

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