All MOSFET. AO8842 Datasheet

 

AO8842 Datasheet and Replacement


   Type Designator: AO8842
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 186 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TSSOP8
 

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AO8842 Datasheet (PDF)

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AO8842

AO8842Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8842 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

Datasheet: AO4916 , AO4916L , AO4926 , AO4928 , AO6806 , AO8803 , AO8806 , AO8816 , 13N50 , AOD400 , AOD402 , AOD404 , AOD406 , AOD408 , AOD410 , AOB10N60L , AOB11S60L .

History: VS3510DS | SFB068N150C3

Keywords - AO8842 MOSFET datasheet

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