IRF831 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF831
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32(max) nC
trⓘ - Rise Time: 30(max) nS
Cossⓘ - Output Capacitance: 200(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
IRF831 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF831 Datasheet (PDF)
irf8313pbf.pdf
PD - 97145IRF8313PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Load Switchl DC/DC Conversion30V 15.5m 6.0nC:@VGS = 10VBenefitsl Low Gate Charge and Low RDS(on)l Fully Characterized Avalanche Voltageand Current S2 1 8 D2l 20V VGS Max. Gate RatingG2 2 7 D2l 100% Tested for RGS1 3 6 D1l Lead-Free (Qualified to 260C Reflow)G1 4 5 D1l RoHS Compliant
irf8313pbf.pdf
PD - 97145IRF8313PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Load Switchl DC/DC Conversion30V 15.5m 6.0nC:@VGS = 10VBenefitsl Low Gate Charge and Low RDS(on)l Fully Characterized Avalanche Voltageand Current S2 1 8 D2l 20V VGS Max. Gate RatingG2 2 7 D2l 100% Tested for RGS1 3 6 D1l Lead-Free (Qualified to 260C Reflow)G1 4 5 D1l RoHS Compliant
irf831fi.pdf
isc N-Channel MOSFET Transistor IRF831FIDESCRIPTIONDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for high efficiency switch mode power supply.ABSO
Datasheet: IRF822FI , IRF823 , IRF830 , IRF830A , IRF830AL , IRF830AS , IRF830FI , IRF830S , IRFB31N20D , IRF831FI , IRF832 , IRF833 , IRF840 , 2SK2209-01R , IRF840A , IRF840AS , IRF840FI .
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