All MOSFET. AON4701 Datasheet

 

AON4701 Datasheet and Replacement


   Type Designator: AON4701
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN3X2
 

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AON4701 Datasheet (PDF)

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AON4701

AON4701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON4701 uses advanced trench technology to provide VDS (V) = -20Vexcellent R DS(ON) and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V)provided to facilitate the implementation of a bidirectional RDS(ON)

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AON4701

AON470320V P-Channel MOSFET with Schottky DiodeGeneral Description FeaturesThe AON4703 uses advanced trench technology to provide VDS (V) = -20Vexcellent R and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V)DS(ON)provided to facilitate the implementation of a bidirectional RDS(ON)

Datasheet: AON2880 , AON3406 , AON3408 , AON3702 , AON4407 , AON4413 , AON4420 , AON4602 , IRF1407 , AON5800 , AON5802A , AOT11S60L , AOT11S65L , AOT15S60L , AOT15S65 , AOT15S65L , AOT20N25L .

History: NCE60NF055F | H04N60F | WMN30N80M3 | SFF240J | 2SK1008-01 | BUZ83

Keywords - AON4701 MOSFET datasheet

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