AON4701 MOSFET Datasheet: P-Ch, 20V, 3.4A. Full specification with pinout and replacement list

AON4701 Specs and Replacement

Type Designator: AON4701

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN3X2

AON4701 substitution

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AON4701 datasheet

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AON4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON4701 uses advanced trench technology to provide VDS (V) = -20V excellent R DS(ON) and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V) provided to facilitate the implementation of a bidirectional RDS(ON) ... See More ⇒

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AON4703 20V P-Channel MOSFET with Schottky Diode General Description Features The AON4703 uses advanced trench technology to provide VDS (V) = -20V excellent R and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V) DS(ON) provided to facilitate the implementation of a bidirectional RDS(ON) ... See More ⇒

Detailed specifications: AON2880, AON3406, AON3408, AON3702, AON4407, AON4413, AON4420, AON4602, IRFP450, AON5800, AON5802A, AOT11S60L, AOT11S65L, AOT15S60L, AOT15S65, AOT15S65L, AOT20N25L