IRF9130 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9130
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29(max) nC
trⓘ - Rise Time: 140(max) nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3
IRF9130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9130 Datasheet (PDF)
2n6804 irf9130.pdf
PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr
irf9130smd05 irfnj9130.pdf
IRFNJ9130IRF9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS -100VID(cont) -11A2RDS(on) 0.30 0.127 (0.005) FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (
irf9130smd.pdf
IRF9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -8A RDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUI
Datasheet: IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF843 , CEP83A3 , IRF9140 , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , IRF9511 , IRF9512 .
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