IRF9130 PDF Specs and Replacement
Type Designator: IRF9130
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140(max) nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3
IRF9130 substitution
IRF9130 PDF Specs
2n6804 irf9130.pdf
PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique pr... See More ⇒
irf9130smd05 irfnj9130.pdf
IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 7.54 (0.296) FOR HI REL 0.76 (0.030) min. APPLICATIONS 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 VDSS -100V ID(cont) -11A 2 RDS(on) 0.30 0.127 (0.005) FEATURES 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) HERMETICALLY SEALED max. 7.26 (... See More ⇒
Detailed specifications: IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF843 , 7N60 , IRF9140 , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , IRF9511 , IRF9512 .
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