All MOSFET. IRF9130 Datasheet

 

IRF9130 Datasheet and Replacement


   Type Designator: IRF9130
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 140(max) nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3
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IRF9130 Datasheet (PDF)

 ..1. Size:149K  international rectifier
 2n6804 irf9130.pdf pdf_icon

IRF9130

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

 0.1. Size:520K  samsung
 irfp9130-33 irf9130-33 irf9530-33.pdf pdf_icon

IRF9130

 0.2. Size:520K  samsung
 irf9130-33 irfp9130-33 irf9530-33.pdf pdf_icon

IRF9130

 0.3. Size:18K  semelab
 irf9130smd05 irfnj9130.pdf pdf_icon

IRF9130

IRFNJ9130IRF9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS -100VID(cont) -11A2RDS(on) 0.30 0.127 (0.005) FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (

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History: FQPF19N20CYDTU | 2SK3273-01MR | MDU5512URH | FDMS3604AS | IXFH110N10P | RSE002P03TL | AP9916H

Keywords - IRF9130 MOSFET datasheet

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