2SK1008-01 Datasheet. Specs and Replacement

Type Designator: 2SK1008-01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO220AB

2SK1008-01 substitution

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2SK1008-01 datasheet

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2SK1008-01

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2SK1008-01

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION Drain Current I =4.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

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2SK1008-01

FUJI POWER MOSFET 2SK1007-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maxi... See More ⇒

Detailed specifications: 2SK320, 2SK3203L, 2SK3203S, 2SK3219-01MR, 2SK3221, 2SK3224, 2SK3225-Z, 2SK1008, BS170, 2SK1009-01, 2SK1010-01, 2SK1572, 2SK1574, 2SK1590C, 2SK1600, 2SK1601, 2SK1602

Keywords - 2SK1008-01 MOSFET specs

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