IRF9410 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 8.3 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
IRF9410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9410 Datasheet (PDF)
irf9410.pdf
PD - 9.1562AIRF9410PRELIMINARYHEXFET Power MOSFET Generation V Technology AA1 8S D Ultra Low On-ResistanceVDSS = 30V2 7 N-Channel MOSFETS D Surface Mount3 6S D Very Low Gate Charge and4 5G DSwitching Losses RDS(on) = 0.030 Fully Avalanche RatedTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Internationa
irf9410pbf.pdf
PD - 95260IRF9410PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-ResistanceA1 8S Dl N-Channel MOSFETVDSS = 30V2 7l Surface Mount S Dl Very Low Gate Charge and3 6S DSwitching Losses45G DRDS(on) = 0.030l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Int
irf9410pbf.pdf
PD - 95260IRF9410PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-ResistanceA1 8S Dl N-Channel MOSFETVDSS = 30V2 7l Surface Mount S Dl Very Low Gate Charge and3 6S DSwitching Losses45G DRDS(on) = 0.030l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Int
Datasheet: IRF841 , IRF841FI , IRF842 , IRF843 , IRF9130 , IRF9140 , IRF9230 , IRF9240 , 2N7000 , IRF9510 , IRF9510S , IRF9511 , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL .
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