IRF9410 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1(min) V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18 nC
Rise Time (tr): 8.3 nS
Drain-Source Capacitance (Cd): 260 pF
Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
Package: SO8
IRF9410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9410 Datasheet (PDF)
irf9410.pdf
PD - 9.1562AIRF9410PRELIMINARYHEXFET Power MOSFET Generation V Technology AA1 8S D Ultra Low On-ResistanceVDSS = 30V2 7 N-Channel MOSFETS D Surface Mount3 6S D Very Low Gate Charge and4 5G DSwitching Losses RDS(on) = 0.030 Fully Avalanche RatedTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Internationa
irf9410pbf.pdf
PD - 95260IRF9410PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-ResistanceA1 8S Dl N-Channel MOSFETVDSS = 30V2 7l Surface Mount S Dl Very Low Gate Charge and3 6S DSwitching Losses45G DRDS(on) = 0.030l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Int
irf9410pbf.pdf
PD - 95260IRF9410PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-ResistanceA1 8S Dl N-Channel MOSFETVDSS = 30V2 7l Surface Mount S Dl Very Low Gate Charge and3 6S DSwitching Losses45G DRDS(on) = 0.030l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Int
Datasheet: IRF841 , IRF841FI , IRF842 , IRF843 , IRF9130 , IRF9140 , IRF9230 , IRF9240 , IRFZ48N , IRF9510 , IRF9510S , IRF9511 , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL .
