IRF9410 Datasheet. Specs and Replacement
Type Designator: IRF9410 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.3 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
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IRF9410 substitution
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IRF9410 datasheet
irf9410.pdf
PD - 9.1562A IRF9410 PRELIMINARY HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Very Low Gate Charge and 4 5 G D Switching Losses RDS(on) = 0.030 Fully Avalanche Rated Top View Description Recommended upgrade IRF7403 or IRF7413 Fifth Generation HEXFETs from Internationa... See More ⇒
irf9410pbf.pdf
PD - 95260 IRF9410PbF HEXFET Power MOSFET l Generation V Technology A l Ultra Low On-Resistance A 1 8 S D l N-Channel MOSFET VDSS = 30V 2 7 l Surface Mount S D l Very Low Gate Charge and 3 6 S D Switching Losses 4 5 G D RDS(on) = 0.030 l Fully Avalanche Rated l Lead-Free Top View Description Recommended upgrade IRF7403 or IRF7413 Fifth Generation HEXFETs from Int... See More ⇒
Detailed specifications: IRF841, IRF841FI, IRF842, IRF843, IRF9130, IRF9140, IRF9230, IRF9240, IRFB31N20D, IRF9510, IRF9510S, IRF9511, IRF9512, IRF9513, IRF9520, IRF9520N, IRF9520NL
Keywords - IRF9410 MOSFET specs
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