IRF9510 Datasheet and Replacement
Type Designator: IRF9510
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220AB
IRF9510 substitution
IRF9510 Datasheet (PDF)
irf9510pbf.pdf

PD- 95410IRF9510PbF Lead-Free06/15/04Document Number: 91072 www.vishay.com1IRF9510PbFDocument Number: 91072 www.vishay.com2IRF9510PbFDocument Number: 91072 www.vishay.com3IRF9510PbFDocument Number: 91072 www.vishay.com4IRF9510PbFDocument Number: 91072 www.vishay.com5IRF9510PbFDocument Number: 91072 www.vishay.com6IRF9510PbFDocument Number: 91
irf9510 sihf9510.pdf

IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
irf9510.pdf

IRF9510www.vishay.comVishay SiliconixPower MOSFETFEATURESS Dynamic dV/dt ratingTO-220AB Repetitive avalanche rated Available P-channelAvailableG 175 C operating temperature Fast switching Ease of parallelingS Simple drive requirementsDG D Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912P
Datasheet: IRF841FI , IRF842 , IRF843 , IRF9130 , IRF9140 , IRF9230 , IRF9240 , IRF9410 , AON7403 , IRF9510S , IRF9511 , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL , IRF9520NS .
Keywords - IRF9510 MOSFET datasheet
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History: PMBF5484 | PMBF5485



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