IRF9510 Datasheet. Specs and Replacement
Type Designator: IRF9510 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 94 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220AB
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IRF9510 substitution
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IRF9510 datasheet
irf9510pbf.pdf
PD- 95410 IRF9510PbF Lead-Free 06/15/04 Document Number 91072 www.vishay.com 1 IRF9510PbF Document Number 91072 www.vishay.com 2 IRF9510PbF Document Number 91072 www.vishay.com 3 IRF9510PbF Document Number 91072 www.vishay.com 4 IRF9510PbF Document Number 91072 www.vishay.com 5 IRF9510PbF Document Number 91072 www.vishay.com 6 IRF9510PbF Document Number 91... See More ⇒
irf9510 sihf9510.pdf
IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi... See More ⇒
irf9510.pdf
IRF9510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available P-channel Available G 175 C operating temperature Fast switching Ease of paralleling S Simple drive requirements D G D Material categorization for definitions of compliance please see www.vishay.com/doc?99912 P... See More ⇒
Detailed specifications: IRF841FI, IRF842, IRF843, IRF9130, IRF9140, IRF9230, IRF9240, IRF9410, 8N60, IRF9510S, IRF9511, IRF9512, IRF9513, IRF9520, IRF9520N, IRF9520NL, IRF9520NS
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History: IRF9410
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