IRF9510 MOSFET Datasheet: P-Ch, 100V, 4A. Full specification with pinout and replacement list

IRF9510 Specs and Replacement

Type Designator: IRF9510

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 94 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220AB

IRF9510 substitution

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IRF9510 datasheet

..1. Size:1126K international rectifier
irf9510pbf.pdf pdf_icon

PD- 95410 IRF9510PbF Lead-Free 06/15/04 Document Number 91072 www.vishay.com 1 IRF9510PbF Document Number 91072 www.vishay.com 2 IRF9510PbF Document Number 91072 www.vishay.com 3 IRF9510PbF Document Number 91072 www.vishay.com 4 IRF9510PbF Document Number 91072 www.vishay.com 5 IRF9510PbF Document Number 91072 www.vishay.com 6 IRF9510PbF Document Number 91... See More ⇒

..2. Size:171K international rectifier
irf9510.pdf pdf_icon

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..3. Size:197K vishay
irf9510 sihf9510.pdf pdf_icon

IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi... See More ⇒

..4. Size:271K vishay
irf9510.pdf pdf_icon

IRF9510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available P-channel Available G 175 C operating temperature Fast switching Ease of paralleling S Simple drive requirements D G D Material categorization for definitions of compliance please see www.vishay.com/doc?99912 P... See More ⇒