2SK1681 Datasheet. Specs and Replacement

Type Designator: 2SK1681

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 240 nS

Cossⓘ - Output Capacitance: 1080 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO3PL

2SK1681 substitution

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2SK1681 datasheet

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2SK1681

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2SK1681

2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 30 V Gate to source voltage VGSS 1 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temper... See More ⇒

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2SK1681

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Detailed specifications: 2SK1602, 2SK1603, 2SK160A, 2SK1626, 2SK1627, 2SK1629-E1-E, 2SK1660, 2SK1662M, 2N60, 2SK1683, 2SK2180, 2SK2182, 2SK2183, 2SK2185, 2SK2186, 2SK2188, 2SK2189

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