2SK1681 Datasheet and Replacement
Type Designator: 2SK1681
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 240 nS
Cossⓘ - Output Capacitance: 1080 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO3PL
2SK1681 substitution
2SK1681 Datasheet (PDF)
2sk168.pdf
2SK168Silicon N-Channel Junction FETApplicationVHF Amplifier, Mixer, Local oscillatorOutlineTO-92 (2)1. Gate2. Source3. Drain3212SK168Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate to source voltage VGSS 1 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temper
Datasheet: 2SK1602 , 2SK1603 , 2SK160A , 2SK1626 , 2SK1627 , 2SK1629-E1-E , 2SK1660 , 2SK1662M , 7N60 , 2SK1683 , 2SK2180 , 2SK2182 , 2SK2183 , 2SK2185 , 2SK2186 , 2SK2188 , 2SK2189 .
History: KP737B | IRFS621 | PTD15N10 | 2SK3152 | SIR496DP
Keywords - 2SK1681 MOSFET datasheet
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History: KP737B | IRFS621 | PTD15N10 | 2SK3152 | SIR496DP
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