2SK1681 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1681
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 240* nS
Drain-Source Capacitance (Cd): 1080 pF
Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm
Package: TO3PL
2SK1681 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1681 Datasheet (PDF)
1.1. 2sk1681.pdf 
Size:46K _update

4.1. 2sk1683.pdf Size:48K _update

4.2. 2sk1686.pdf Size:49K _upd

4.3. 2sk1685.pdf Size:158K _upd
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4.4. 2sk1684.pdf Size:47K _upd

4.5. 2sk168.pdf Size:43K _hitachi
2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –30 V Gate to source voltage VGSS –1 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temperature Tc
Datasheet: 2SK1602 , 2SK1603 , 2SK160A , 2SK1626 , 2SK1627 , 2SK1629-E1-E , 2SK1660 , 2SK1662M , SPA11N60C3 , 2SK1683 , 2SK2180 , 2SK2182 , 2SK2183 , 2SK2185 , 2SK2186 , 2SK2188 , 2SK2189 .
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