IRF9510S Specs and Replacement
Type Designator: IRF9510S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO263
IRF9510S substitution
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IRF9510S datasheet
irf9510spbf.pdf
PD- 95763 IRF9510SPbF Lead-Free 06/06/05 Document Number 91073 www.vishay.com 1 IRF9510SPbF Document Number 91073 www.vishay.com 2 IRF9510SPbF Document Number 91073 www.vishay.com 3 IRF9510SPbF Document Number 91073 www.vishay.com 4 IRF9510SPbF Document Number 91073 www.vishay.com 5 IRF9510SPbF Document Number 91073 www.vishay.com 6 IRF9510SPbF Peak Diode R... See More ⇒
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi... See More ⇒
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi... See More ⇒
Detailed specifications: IRF842 , IRF843 , IRF9130 , IRF9140 , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRFB7545 , IRF9511 , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL , IRF9520NS , IRF9521 .
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