IRF9520NS Datasheet. Specs and Replacement
Type Designator: IRF9520NS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO263
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IRF9520NS substitution
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IRF9520NS datasheet
irf9520ns.pdf
PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒
irf9520npbf.pdf
PD - 95411 IRF9520NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.48 l P-Channel G l Fully Avalanche Rated ID = -6.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res... See More ⇒
irf9520nl.pdf
PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒
irf9520n.pdf
PD - 91521A IRF9520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.48 P-Channel G Fully Avalanche Rated ID = -6.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒
Detailed specifications: IRF9510, IRF9510S, IRF9511, IRF9512, IRF9513, IRF9520, IRF9520N, IRF9520NL, IRF830, IRF9521, IRF9522, IRF9523, IRF9530, IRF9530N, APT5015BLC, IRF9530NL, IRF9530NS
Keywords - IRF9520NS MOSFET specs
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