All MOSFET. IRF9520NS Datasheet

 

IRF9520NS Datasheet and Replacement


   Type Designator: IRF9520NS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO263
 

 IRF9520NS substitution

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IRF9520NS Datasheet (PDF)

 ..1. Size:155K  international rectifier
 irf9520ns.pdf pdf_icon

IRF9520NS

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 6.1. Size:160K  international rectifier
 irf9520npbf.pdf pdf_icon

IRF9520NS

PD - 95411IRF9520NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.48l P-ChannelGl Fully Avalanche RatedID = -6.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-res

 6.2. Size:155K  international rectifier
 irf9520nl.pdf pdf_icon

IRF9520NS

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 6.3. Size:95K  international rectifier
 irf9520n.pdf pdf_icon

IRF9520NS

PD - 91521AIRF9520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -6.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

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Datasheet: IRF9510 , IRF9510S , IRF9511 , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL , AO3407 , IRF9521 , IRF9522 , IRF9523 , IRF9530 , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS .

History: IRF9513

Keywords - IRF9520NS MOSFET datasheet

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