IRF9521 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9521
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100(max) nS
Cossⓘ - Output Capacitance: 350(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
IRF9521 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9521 Datasheet (PDF)
irf9520pbf.pdf
PD- 95412IRF9520PbF Lead-Free06/15/04Document Number: 91074 www.vishay.com1IRF9520PbFDocument Number: 91074 www.vishay.com2IRF9520PbFDocument Number: 91074 www.vishay.com3IRF9520PbFDocument Number: 91074 www.vishay.com4IRF9520PbFDocument Number: 91074 www.vishay.com5IRF9520PbFDocument Number: 91074 www.vishay.com6IRF9520PbFDocument Number: 91
irf9520ns.pdf
PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve
irf9520spbf.pdf
PD-95987IRF9520SPbF Lead-Free06/07/05Document Number: 91075 www.vishay.com1IRF9520SPbFDocument Number: 91075 www.vishay.com2IRF9520SPbFDocument Number: 91075 www.vishay.com3IRF9520SPbFDocument Number: 91075 www.vishay.com4IRF9520SPbFDocument Number: 91075 www.vishay.com5IRF9520SPbFDocument Number: 91075 www.vishay.com6IRF9520SPbFPeak Diode Re
irf9520nl.pdf
PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve
irf9520n.pdf
PD - 91521AIRF9520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -6.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
irf9520nlpbf.pdf
PD- 95764IRF9520NSPbFIF9520NLPbF Lead-Freewww.irf.com 104/26/05IRF9520NS/LPbF2 www.irf.comIRF9520NS/LPbFwww.irf.com 3IRF9520NS/LPbF4 www.irf.comIRF9520NS/LPbFwww.irf.com 5IRF9520NS/LPbF6 www.irf.comIRF9520NS/LPbFwww.irf.com 7IRF9520NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS A
irf9520s sihf9520s.pdf
IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
irf9520 sihf9520.pdf
IRF9520, SiHF9520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 P-Channel RoHS*Qg (Max.) (nC) 18COMPLIANT 175 C Operating TemperatureQgs (nC) 3.0 Fast SwitchingQgd (nC) 9.0 Ease of ParallelingConfiguration Single Simple Drive Requi
irf9520s irf9520spbf sihf9520s.pdf
IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
irf9520npbf.pdf
PD - 95411IRF9520NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.48l P-ChannelGl Fully Avalanche RatedID = -6.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-res
Datasheet: IRF9510S , IRF9511 , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL , IRF9520NS , 5N50 , IRF9522 , IRF9523 , IRF9530 , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 .
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