All MOSFET. 2SK888 Datasheet

 

2SK888 Datasheet and Replacement


   Type Designator: 2SK888
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220AB
 

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2SK888 Datasheet (PDF)

 ..1. Size:110K  toshiba
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2SK888

( DataSheet : www.DataSheet4U.com )www.DataSheet4U.com www.DataSheet4U.com

 9.1. Size:60K  toshiba
 2sk889.pdf pdf_icon

2SK888

 9.2. Size:174K  toshiba
 2sk882.pdf pdf_icon

2SK888

2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.025 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: G = 28dB (typ.) ps Recommend operation voltage: 5~15 V Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit

 9.3. Size:294K  toshiba
 2sk880.pdf pdf_icon

2SK888

2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = -50 V Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance: IGSS = -1 nA (max) at VGS = -30 V

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Datasheet: 2SK4057-ZK-E2-AY , 2SK4058-S27-AY , 2SK4058-ZK-E1-AY , 2SK4058-ZK-E2-AY , 2SK4065-DL-1E , 2SK401 , 2SK402 , 2SK403 , 2SK3568 , 2SK889 , 2SK890 , 2SK891 , 2SK892 , 2SK893 , 2SK894 , 2SK897-M , 2SK796 .

History: SVTP209R7NP7 | AP2R803GS-HF | SK840320

Keywords - 2SK888 MOSFET datasheet

 2SK888 cross reference
 2SK888 equivalent finder
 2SK888 lookup
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 2SK888 replacement

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