2SK1020 Datasheet and Replacement
Type Designator: 2SK1020
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 300
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package:
TO3PL
- MOSFET Cross-Reference Search
2SK1020 Datasheet (PDF)
..1. Size:223K inchange semiconductor
2sk1020.pdf 
isc N-Channel MOSFET Transistor 2SK1020DESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol
8.5. Size:200K inchange semiconductor
2sk1023.pdf 
isc N-Channel MOSFET Transistor 2SK1023DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
8.6. Size:60K inchange semiconductor
2sk1022.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GSV Gat
8.7. Size:257K inchange semiconductor
2sk1029.pdf 
isc N-Channel MOSFET Transistor 2SK1029FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
8.8. Size:200K inchange semiconductor
2sk1024.pdf 
isc N-Channel MOSFET Transistor 2SK1024DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.9. Size:200K inchange semiconductor
2sk1021.pdf 
isc N-Channel MOSFET Transistor 2SK1021DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta
Datasheet: 2SK1011-01
, 2SK1012-01
, 2SK1014-01
, 2SK1015
, 2SK1015-01
, 2SK1016-01
, 2SK1017-01
, 2SK1018
, IRLZ44N
, 2SK1021
, 2SK1022
, 2SK1023-01
, 2SK1024-01
, 2SK2023-01
, 2SK2027-01
, 2SK2100-01MR
, 2SK2133-Z
.
Keywords - 2SK1020 MOSFET datasheet
2SK1020 cross reference
2SK1020 equivalent finder
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2SK1020 replacement