All MOSFET. 2SK644 Datasheet

 

2SK644 Datasheet and Replacement


   Type Designator: 2SK644
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO3PN
 

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2SK644 Datasheet (PDF)

 ..1. Size:236K  inchange semiconductor
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2SK644

isc N-Channel MOSFET Transistor 2SK644DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed,high Current Switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER

 9.1. Size:49K  hitachi
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2SK644

 9.2. Size:38K  hitachi
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2SK644

 9.3. Size:230K  inchange semiconductor
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2SK644

isc N-Channel MOSFET Transistor 2SK643DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

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History: AON3613

Keywords - 2SK644 MOSFET datasheet

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