2SK646 Datasheet and Replacement
Type Designator: 2SK646
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 80 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3
2SK646 substitution
2SK646 Datasheet (PDF)
2sk643.pdf

isc N-Channel MOSFET Transistor 2SK643DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
2sk641.pdf

isc N-Channel MOSFET Transistor 2SK641DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Datasheet: 2SK3432-Z , 2SK3432-ZJ , 2SK3433 , 2SK3433-S , 2SK3433-Z , 2SK3433-ZJ , 2SK643 , 2SK644 , 10N65 , 2SK672 , 2SK673 , 2SK674 , 2SK678 , 2SK682 , 2SK683 , 2SK684 , 2SK1483C .
History: IXFT30N50P | SFW097N200C3 | OSG80R190PF | IPD65R400CE | SFW031N100C3 | CST30N10U | AONX38320
Keywords - 2SK646 MOSFET datasheet
2SK646 cross reference
2SK646 equivalent finder
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History: IXFT30N50P | SFW097N200C3 | OSG80R190PF | IPD65R400CE | SFW031N100C3 | CST30N10U | AONX38320



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