2SK684 Datasheet and Replacement
Type Designator: 2SK684
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO247AD
2SK684 substitution
2SK684 Datasheet (PDF)
2sk684.pdf

isc N-Channel MOSFET Transistor 2SK684DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable fo
Datasheet: 2SK644 , 2SK646 , 2SK672 , 2SK673 , 2SK674 , 2SK678 , 2SK682 , 2SK683 , 2N60 , 2SK1483C , 2SK1493-Z , 2SK1494-Z , 2SK1495-Z , 2SK1496-Z , 2SK1503 , 2SK1503-01 , 2SK1511 .
History: AP2602GY | SSF4004 | S-LBSS138WT1G | AOB11S60L | S85N042RP | XP152A11E5MR-G | RFM4N35
Keywords - 2SK684 MOSFET datasheet
2SK684 cross reference
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History: AP2602GY | SSF4004 | S-LBSS138WT1G | AOB11S60L | S85N042RP | XP152A11E5MR-G | RFM4N35



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