2SK1503-01
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1503-01
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package:
TO220AB
2SK1503-01
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1503-01
Datasheet (PDF)
7.1. Size:60K inchange semiconductor
2sk1503.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1503 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA
8.6. Size:196K inchange semiconductor
2sk1507.pdf
isc N-Channel MOSFET Transistor 2SK1507DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and soleno
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