IRF9640 Datasheet and Replacement
Type Designator: IRF9640
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 44(max) nC
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220AB
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IRF9640 Datasheet (PDF)
irf9640pbf.pdf

PD - 94981IRF9640PbF Lead-Free02/04/04Document Number: 91086 www.vishay.com1IRF9640PbFDocument Number: 91086 www.vishay.com2IRF9640PbFDocument Number: 91086 www.vishay.com3IRF9640PbFDocument Number: 91086 www.vishay.com4IRF9640PbFDocument Number: 91086 www.vishay.com5IRF9640PbFDocument Number: 91086 www.vishay.com6IRF9640PbFTO-220AB Package O
irf9640 rf1s9640sm.pdf

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
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Datasheet: IRF9621 , IRF9622 , IRF9623 , IRF9630 , IRF9630S , IRF9631 , IRF9632 , IRF9633 , IRFP260 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF9952 , IRF9953 , IRF9Z10 , IRF9Z12 .
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