All MOSFET. IRF9640 Datasheet

 

IRF9640 Datasheet and Replacement


   Type Designator: IRF9640
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44(max) nC
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220AB
 

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IRF9640 Datasheet (PDF)

 ..1. Size:170K  international rectifier
 irf9640.pdf pdf_icon

IRF9640

 ..2. Size:2131K  international rectifier
 irf9640pbf.pdf pdf_icon

IRF9640

PD - 94981IRF9640PbF Lead-Free02/04/04Document Number: 91086 www.vishay.com1IRF9640PbFDocument Number: 91086 www.vishay.com2IRF9640PbFDocument Number: 91086 www.vishay.com3IRF9640PbFDocument Number: 91086 www.vishay.com4IRF9640PbFDocument Number: 91086 www.vishay.com5IRF9640PbFDocument Number: 91086 www.vishay.com6IRF9640PbFTO-220AB Package O

 ..3. Size:103K  fairchild semi
 irf9640 rf1s9640sm.pdf pdf_icon

IRF9640

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 ..4. Size:490K  samsung
 irf9240 irf9241 irf9242 irf9243 irfp9240 irfp9241 irfp9242 irfp9243 irf9640 irf9641 irf9642 irf9643.pdf pdf_icon

IRF9640

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Datasheet: IRF9621 , IRF9622 , IRF9623 , IRF9630 , IRF9630S , IRF9631 , IRF9632 , IRF9633 , 2N7000 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF9952 , IRF9953 , IRF9Z10 , IRF9Z12 .

History: IPI110N20N3 | IRF640N

Keywords - IRF9640 MOSFET datasheet

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