2SK872 Specs and Replacement
Type Designator: 2SK872
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO3P
2SK872 substitution
- MOSFET ⓘ Cross-Reference Search
2SK872 datasheet
2sk879.pdf
2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit mm High breakdown voltage VGDS = -50 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low noise NF = 0.5dB (typ.) (RG = 100 k , f = 120 Hz) Small package Absolute Maximum Ratings (Ta = ... See More ⇒
Detailed specifications: 2SK903MR, 2SK930, 2SK943, 2SK944, 2SK945, 2SK949M, 2SK874, 2SK903-M, AO4407, 2SK873, 2SK152, 2SK1521-E1-E, 2SK1522-E1-E, 2SK1523, 2SK1524, 2SK1525, 2SK1527-E1-E
Keywords - 2SK872 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AOTF16N50 | NP88N04NHE
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