2SK872 Datasheet and Replacement
Type Designator: 2SK872
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO3P
2SK872 substitution
2SK872 Datasheet (PDF)
2sk879.pdf
2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =
Datasheet: 2SK903MR , 2SK930 , 2SK943 , 2SK944 , 2SK945 , 2SK949M , 2SK874 , 2SK903-M , P60NF06 , 2SK873 , 2SK152 , 2SK1521-E1-E , 2SK1522-E1-E , 2SK1523 , 2SK1524 , 2SK1525 , 2SK1527-E1-E .
History: IRFSL3107PBF | 7NM70G-TF3T-T | SI1013X | AON6206 | HMS21N60F
Keywords - 2SK872 MOSFET datasheet
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History: IRFSL3107PBF | 7NM70G-TF3T-T | SI1013X | AON6206 | HMS21N60F
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