2SK873 Specs and Replacement
Type Designator: 2SK873
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO3P
2SK873 substitution
- MOSFET ⓘ Cross-Reference Search
2SK873 datasheet
2sk879.pdf
2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit mm High breakdown voltage VGDS = -50 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low noise NF = 0.5dB (typ.) (RG = 100 k , f = 120 Hz) Small package Absolute Maximum Ratings (Ta = ... See More ⇒
Detailed specifications: 2SK930 , 2SK943 , 2SK944 , 2SK945 , 2SK949M , 2SK874 , 2SK903-M , 2SK872 , BS170 , 2SK152 , 2SK1521-E1-E , 2SK1522-E1-E , 2SK1523 , 2SK1524 , 2SK1525 , 2SK1527-E1-E , 2SK1534 .
Keywords - 2SK873 MOSFET specs
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