2SK858 Datasheet. Specs and Replacement

Type Designator: 2SK858  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO220AB

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2SK858 datasheet

 ..1. Size:59K  inchange semiconductor
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2SK858

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VA... See More ⇒

 9.1. Size:62K  toshiba
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2SK858

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2SK858

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2SK858

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Detailed specifications: 2SK819, 2SK831, 2SK833, 2SK849, 2SK851, 2SK854, 2SK855, 2SK856, SPP20N60C3, 2SK859, 2SK867, 2SK867A, 2SK868, 2SK868A, 2SK869, 2SK870, 2SK871

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.