2SK858
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK858
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 2
A
Tj ⓘ - Максимальная температура канала: 150
°C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4
Ohm
Тип корпуса:
TO220AB
Аналог (замена) для 2SK858
-
подбор ⓘ MOSFET транзистора по параметрам
2SK858
Datasheet (PDF)
..1. Size:59K inchange semiconductor
2sk858.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA
9.5. Size:201K inchange semiconductor
2sk857.pdf 
isc N-Channel MOSFET Transistor 2SK857DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
9.6. Size:60K inchange semiconductor
2sk851.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage- : VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V
9.7. Size:198K inchange semiconductor
2sk856.pdf 
isc N-Channel MOSFET Transistor 2SK856DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
9.8. Size:62K inchange semiconductor
2sk859.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA
9.9. Size:218K inchange semiconductor
2sk850.pdf 
isc N-Channel MOSFET Transistor 2SK850DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D
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