2SK867 Datasheet and Replacement
Type Designator: 2SK867
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 120 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO3P
2SK867 substitution
2SK867 Datasheet (PDF)
2sk867.pdf

isc N-Channel MOSFET Transistor 2SK867DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk867a.pdf

isc N-Channel MOSFET Transistor 2SK867ADESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela
Datasheet: 2SK833 , 2SK849 , 2SK851 , 2SK854 , 2SK855 , 2SK856 , 2SK858 , 2SK859 , IRFB3607 , 2SK867A , 2SK868 , 2SK868A , 2SK869 , 2SK870 , 2SK871 , 2SK3987-01L , 2SK3987-01S .
History: IRF3709ZS
Keywords - 2SK867 MOSFET datasheet
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History: IRF3709ZS



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