2SK871 Datasheet. Specs and Replacement

Type Designator: 2SK871

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO3P

2SK871 substitution

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2SK871 datasheet

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2SK871

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit mm High breakdown voltage VGDS = -50 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low noise NF = 0.5dB (typ.) (RG = 100 k , f = 120 Hz) Small package Absolute Maximum Ratings (Ta = ... See More ⇒

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Detailed specifications: 2SK858, 2SK859, 2SK867, 2SK867A, 2SK868, 2SK868A, 2SK869, 2SK870, IRFB3607, 2SK3987-01L, 2SK3987-01S, 2SK3987-01SJ, 2SK3988-01, 2SK3989-01MR, 2SK3990-01L, 2SK3990-01S, 2SK3990-01SJ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.